1of 2 smd type 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source KDB2670 (fdb2670) features 19 a, 200 v. r ds(on) =130m @v gs =10v low gate charge (27 nc typical) fast switching speed high performance trench technology for extremely low r ds(on) high power and current handling capability absolute maximum ratings ta = 25 parameter symbol rating unit draintosourcevoltage v dss 200 v gate to source voltage v gss 20 v drain current-continuous i d 19 a drain current-pulsed i dp 40 a power dissipation 93 w derate above 25 0.63 w/ peak diode recovery dv/dt d v /d t 3.2 v/ns thermal resistance junction to ambient r ja 62.5 /w thermal resistance, junction-to-case r jc 1.6 /w channel temperature t ch 175 storage temperature t stg -65to+175 p d smd type smd type smd type smd type smd type smd type product specification smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
smd type electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage v dss i d =250a v gs =0v 200 v drain cut-off current i dss v ds =160v,v gs =0 1 a gate leakage current i gss v gs = 20v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250a 2.0 4 4.5 v v gs =10v,i d =10a 98 130 v gs =10v,i d =10a,t j =125 205 285 on?state drain current i d(on) v gs =10v,v ds =10v 20 a forward transconductance g fs v ds =10v,i d =10a 24 s input capacitance c iss 1320 pf output capacitance c oss 71 pf reverse transfer capacitance c rss 24 pf total gate charge qg 27 38 nc gate-source charge qgs 7 nc gate-drain charge qgd 10 nc turn-on delay time t d(on) 14 25 ns rise time t r 510ns turn-off delay time t d(off) 26 41 ns fall time t f 23 37 ns maximum continuous drain-source diode forward current i s 19 a source to drain diode voltage v sd v gs =0v,i s = 11 a * 0.83 1.3 v * pulse test: pulse width 300s, duty cycle 2.0% v dd = 100v, i d =1a, v gs =10v,r gen =6 * v ds = 100 v, i d =10a,v gs =10v* drain to source on-state resistance r ds(on) m v ds =100v,v gs =0,f=1mhz smd type smd type smd type smd type smd type smd type product specification KDB2670 (fdb2670) 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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